t4 - lds - 0237, rev . 1 (11 1961) ?2011 microsemi corporation page 1 of 6 2n5003 and 2n5005 available on commercial versions pnp power silicon transistor qualified per mil - prf - 19500/535 qualified levels: jan, jantx, and jantxv description this high speed transistor is rated at 5 amps and is military qualified up to a jan txv level . this to - 59 isolated package is available with a 180 degree lead orientation. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. marking may vary. to - 59 (to - 210aa) isolated package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n5003 and 2n5005 . ? internal metallurgical bond option available . ? jan, jantx, and jantxv , qualification per mil - prf - 19500/ 535 available . ? rohs compliant versions available (commercial grade only) . applications / benefits ? fast switching capable - 0.5 s rise time . ? high frequency response. ? to - 59 case with isolated terminals . ? class 3b to esd per mil - std - 750 method 1020. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c thermal resistance junction - to - ambient r ? ja 88 o c /w thermal resistance junction - to - case r ? jc 3.0 o c /w c ollector current i c i c (3) 5.0 10 a collector - emitter voltage v ceo 80 v collector - base voltage v cbo 100 v emitter - base voltage v ebo 5.5 v steady - state power dissipation @ t a = +25 o c (1) @ t c = +25 o c (2) p d 2.0 58 w notes : 1. derate linearly 1 1.4 mw/ o c for t a > +25 o c. 2. derate linearly 331 mw/ o c for t c > +25 o c. 3. this value applies for pw < 8.3 ms, duty cycle < 1% . downloaded from: http:///
t4 - lds - 0237, rev . 1 (11 1961) ?2011 microsemi corporation page 2 of 6 2n5003 and 2n5005 mechanical and packaging ? case: nickel plated . ? terminals: solder dip over nickel plating . rohs compliant matte/tin available on commercial grade only. ? marking: manufacturers id, date code, part number, beo . ? polarity: see package outline drawing on last page. ? see p ackage d imensions on last page. part nomenclature jan 2 n5 003 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i ces c ollector emitter cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
t4 - lds - 0237, rev . 1 (11 1961) ?2011 microsemi corporation page 3 of 6 2n5003 and 2n5005 electrical characteristics @ t c = 25 o c unless otherwise noted. characteristic symbol min. max. unit of f characteristics collector - emitte r br eakdow n voltage i c = 10 0 ma v (br) ceo 80 v collector - emitter cutoff current v ce = 40 v, i b = 0 i ceo 50 a collector - emitter cutoff current v ce = 60 v, v be = 0 v ce = 10 0 v, v be = 0 i ces 1.0 1.0 a ma emitter -base cutoff current v be = 4. 0 v, i c = 0 v be = 5. 5 v, i c = 0 i ebo 1.0 1.0 a ma on characteristics forward - current transfer ratio i c = 50 ma , v ce = 5. 0 v 2n5003 i c = 2. 5 a, v ce = 5. 0 v i c = 5. 0 a, v ce = 5.0 v i c = 50 ma , v ce = 5. 0 v 2n5005 i c = 2. 5 a, v ce = 5. 0 v i c = 5. 0 a, v ce = 5. 0 v h fe 20 30 20 50 70 40 90 200 base- emitter voltage non - saturated v ce = 5. 0 v, i c =2. 5 a v be 1.45 v collector - emitter saturation voltage i c = 2. 5 a, i b = 25 0 ma i c = 5. 0 a, i b = 50 0 ma v ce(sat) 0.75 1.5 v base- emitter saturation voltage i c = 2. 5 a, i b = 250 ma i c = 5. 0 a, i b = 50 0 ma v be(sat) 1.45 2.2 v dynami c characteristics commo n emitte r small - signal short- circuit forward current transfer ratio 2n5003 i c = 10 0 ma , v ce = 5. 0 v, f = 1 kh z 2n5005 h fe 20 50 magnitude of commo n emitte r small - signal short- circuit forward current transfer ratio 2n5003 i c = 50 0 ma , v ce = 5. 0 v, f = 10 mh z 2n5005 |h fe | 6.0 7.0 output capacitance v cb = 10 v, i e = 0, f = 1 mhz c obo 250 pf switchin g characteristics turn -on time i c = 5 a; i b1 = 50 0 m a t on 0.5 s storag e time i b2 = - 500 m a v be(off) = 3.7 v t s 1.4 s fall time t f 0.5 s turn - of f time r l = 6 ohms t off 1.5 s downloaded from: http:///
t4 - lds - 0237, rev . 1 (11 1961) ?2011 microsemi corporation page 4 of 6 2n5003 and 2n5005 electrical characteristics @ t c = 25 o c unless otherwise noted. (continued) saf e operatin g area (see figure b elow and mil - std - 750,test m ethod 30 5 3 ) dc tests t c = +25 0 c, v ce = 0, t p = 1 secon d 1 cycle test 1 v ce = 12 v, i c = 5 a test 2 v ce = 32 v, i c = 1. 7 a tes t 3 v ce = 80 v, i c = 10 0 ma v ce - collector C emitter voltage C v maximum safe operating area i c C collector current C a downloaded from: http:///
t4 - lds - 0237, rev . 1 (11 1961) ?2011 microsemi corporation page 5 of 6 2n5003 and 2n5005 graphs t c C case temperature ( o c) figure 1 temperature - power derating time (s) figure 2 thermal impedance maximum dc operation rating (w) maximum dc operation rating (w) downloaded from: http:///
t4 - lds - 0237, rev . 1 (11 1961) ?2011 microsemi corporation page 6 of 6 2n5003 and 2n5005 package dimensions not es: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. see nsb handbook h28, screw - thread standards for federal services. 4. the orientation of the terminals in relation to the hex flats is not controlled. 5. all three terminals. 6. the case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) of the stud. 7. terminal spacing measured at the base seat only. 8. this dimension applies to the location of the center line of the termin als. 9. terminal - 1, emitter; terminal - 2, base; terminal - 3, collector. collector lead is isolated from the case. 10. in accordance with asme y14.5m, diameters are equivalent to x symbology. sy mbol dimension notes inches millimeters min max min max a 1 .250 6.35 cd .330 .360 8.38 9.14 cd 1 .370 .437 9.40 11.10 ch .320 .468 8.13 11.89 hf .424 .437 10.77 11.10 ht .090 .150 2.29 3.81 oah .575 .763 14.61 19.38 5 ps .185 .215 4.70 5.46 4, 8 ps 1 .090 .110 2.29 2.79 4, 8 sl .400 .455 10.16 11.56 su .078 1.98 7 t .040 .065 1.02 1.65 ud .155 .189 3.94 4.80 downloaded from: http:///
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